TO220B03 Pkg Drawing 数据手册
其他文档
FQP50N06 10 pages
技术规格
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Tube
- Part Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FQP5
- detail: N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-220-3